Electrical Characterization of Thin-film Electroluminescent Devices

Electrical characterization methods for the analysis of alternating current thinfilm electroluminescent (ACTFEL) devices are reviewed. Particular emphasis is devoted to electrical characterization techniques because ACTFEL devices are electro-optic display devices whose performance is to a large extent determined by their electrical properties. A systematic procedure for ACTFEL electrical assessment is described. The utility of transient charge, voltage, current, and phosphor field analysis is explained. Steady-state electrical characterization methods discussed in this review include charge-voltage (Q-V), capacitance-voltage (CV), internal charge-phosphor field (Q-Fp), and maximum charge-maximum applied voltage (Qmax-Vmax) analysis. These electrical characterization methods are illustrated by reviewing relevant results obtained from the analysis of evaporated ZnS:Mn and atomic layer epitaxy (ALE) SrS:Ce ACTFEL devices.